| 发明名称 |
CVD method for forming Bi-containing oxide superconducting films |
| 摘要 |
Films of high Tc Bi-Sr-Ca-Cu-O superconductor have been prepared by MOCVD using volatile metal organic precursors and water vapor. The metal organic precursors are volatized along with a bismuth source, such as Bi(C6H5)3, deposited on a heated substrate to form a film, and annealed.
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| 申请公布号 |
US5296460(A) |
申请公布日期 |
1994.03.22 |
| 申请号 |
US19920926156 |
申请日期 |
1992.08.05 |
| 申请人 |
NORTHWESTERN UNIVERSITY |
发明人 |
WESSELS, BRUCE W.;MARKS, TOBIN J.;RICHESON, DARRIN S.;TONGE, LAUREN M.;ZHANG, JIMING |
| 分类号 |
C07C45/77;C07C49/92;C07F1/00;C07F3/00;C07F5/00;C23C16/40;H01L39/24;(IPC1-7):C23C16/00;B05D5/12 |
主分类号 |
C07C45/77 |
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