| 发明名称 |
Double gate FET and process for manufacturing same |
| 摘要 |
A high speed and highly functional MOSFET having a thin channel formed in a single crystalline layer is controlled by voltages applied to both an upper gate electrode and a buried gate layer that sandwich the channel therebetween.
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| 申请公布号 |
US5296727(A) |
申请公布日期 |
1994.03.22 |
| 申请号 |
US19930057016 |
申请日期 |
1993.05.05 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
KAWAI, SHINICHI;IZAWA, TETSUO |
| 分类号 |
H01L21/336;H01L29/06;H01L29/10;H01L29/78;H01L29/786;(IPC1-7):H01L29/78;H01L21/265 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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