| 摘要 |
PURPOSE:To provide a method wherein a fine linear etching mask whose accuracy is high is manufactured by a sidewall method regarding the manufacturing method of the fine linear etching mask used to form parallel fine lines having a very small interval for a quantum wire, a diffraction grating or the like. CONSTITUTION:The title manufacture adopts a process wherein a fine stripe 2 composed of a first material (resist) is formed on a substrate 1 to be etched, a process wherein a film 3 composed of a second material (SiO2) is deposited, by a vapor growth method such as a CVD method or the like, on the whole surface including the fine stripe 2 composed of the first material, a process wherein the film 3 composed of the second material is anisotropically dry-etched and sidewalls 3a composed of the second material are formed on sidewalls of the fine stripe 2 composed of the first material and a process wherein the fine stripe 2 composer of the first material is removed and fine linear etching resist masks 3b are left. When the processes are repeated, it is possible to manufacture the fine linear etching masks which are much finer. |
