| 摘要 |
PURPOSE:To provide a production method using a brief process to obtain a photomask having a practical phase shifter which is excellent in durability, chemical resistance and stability to exposure light. CONSTITUTION:An ITO film 16 is formed on a transparent substrate 10, on which a chromium pattern 12 is formed. A silicon resin compsn. prepared by dissolving 10g poly(siloxane) and 50mg triphenylsulfonium trifluoromethane sulfonate in 50ml MIBK and filtering is applied by spin coating and then softly baked at 80 deg.C for two min. to form a light transmitting film 30. Then this film is selectively exposed to 10muC/cm<2> exposure with an MEBES selection beam exposuring machine, and based at 160 deg.C for 5min. to change the exposed area 32 into SiO2. Then the film is developed with methoxybenzene to obtain the photomask having a phase shifter 14. |
