| 摘要 |
PURPOSE:To obtain a semiconductor device including a low-leakage capacitive element with a large capacitance per area. CONSTITUTION:The title method is for the manufacture of a capacitive element for connection between the base and collector in a bipolar static memory cell. An oxide film 4 is formed on a semiconductor substrate, and a slit 5 is formed therein. A first polycrystalline silicon layer 6 to be the lower electrode of a capacitive element is formed. A nitride film 7 for the capacitive element is formed, and then heat treatment is performed in an oxidizing atmosphere. A slit 8 is formed in the oxide film 4 in the base formation region, and a second polycrystalline silicon layer 9 is formed as the outgoing layer of the base and the upper electrode of the capacitive element. |
