| 摘要 |
PURPOSE:To easily form a high-voltage interconnection layer which can be passed through the upper part of a region provided with different potential differences without lowering the breakdown strength of a semiconductor layer under the high-voltage interconnection layer. CONSTITUTION:A semiconductor device by this invention is composed of a diode which is formed of a first N<+> type diffused layer 12 and a second P<+> type diffused layer 13 formed on an N- type semiconductor substrate 11, of an insulating film 14 which is formed on the surface of the substrate, of a first interconnection layer 15 which is connected to the first diffused layer 12 and which is passed through the upper part of a second diffused layer 16 and of a resistor 17 which is composed of polycrystalline silicon in the insulating film 14, which is formed continuously so as to traverse the lower part of the first interconnection layer 15 several times and both ends of which are connected to the first diffused layer 12 and the second diffused layer 13. |
