| 摘要 |
PURPOSE: To improve a thin-film property on a substrate by carrying vacuum evaporation of a thin film on a substrate in a vacuum environment, and carrying out plasma annealing or heat annealing of the sputter-evaporated thin film, without taking out the substrate from the vacuum environment. CONSTITUTION: At an annealing stage, under a condition such that a substrate 30 in a vacuum environment can be transferred between chambers 40, sputter evaporation is carried out in the same vacuum chamber 40 or in a different vacuum chamber. That is, after a thin film has been evaporated on the wafer 30, plasma-annealing or heat-annealing of the evaporated thin film is used for reinforcing a boundary property of an upper part of the evaporated thin film. In the chamber 40, plasma-annealing or heat-annealing may be carried, and in an isolated chamber plasma-annealing may be carried out. |
