发明名称 PHOTO MOS RELAY
摘要 PURPOSE:To control a fine voltage by a method wherein an MOS FET is prevented from being directly irradiated with the light from an LED by shielding the FET with an input side frame, and the electromotive force caused by light is reduced. CONSTITUTION:An LED 1 covered with a transparent material film 2 like silicon and a photoelectric element 3 arranged so as to face the LED 1 are molded in a unified body by using epoxy resin 4. The outside of the epoxy resin 4 is doubly molded collectively by using epoxy resin 5 of non-transparency. MOS FET's 6, 6 are arranged on both sides of the photoelectric element 3. In order to shield the MOS FET's 6, 6 from irradiation with the light from the LED 1, frames 7, 7, 7 are arranged on the input side.
申请公布号 JPH0677521(A) 申请公布日期 1994.03.18
申请号 JP19920226641 申请日期 1992.08.26
申请人 MATSUSHITA ELECTRIC WORKS LTD 发明人 MIYAMOTO YASUNORI
分类号 H01L31/12;H01L33/54;H01L33/56;H01L33/62 主分类号 H01L31/12
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