| 摘要 |
PURPOSE:To realize a grain boundary insulating type semiconductor porcelain high in withstahd voltage and electric capacity by a method wherein oxide such as Li2I and Bi2O3 is thermally diffused into a sintered body composed of specific oxide as main material and at least secondary material such as Nb2O5, Mn3O4, CuO, B2O3, and Sin. added to the main material. CONSTITUTION:Nb2O5 0.1 to 0.4mol, Mn3O4 0.015 to 0.05mol, CuO 0.1 to 0.3mol, B2O3 0. 05 to 0.2mol, and SiO2, 0.5 to 2.0mol are added to main oxide material which contains Ti 100mol, Sr 70 to 80mol, and Ca 20 to 30mol, and the main oxide material which contains the additives is burned. Oxide of Li2O and Bi2O3, where the mol ratio of Li2O to Bi2O3 is 30 to 70:70 to 30, is thermally diffused into the burned body concerned. By this setup, a grain boundary insulating type semiconductor porcelain, suitable for an LC circuit of a noise filter used in a switching power supply and of 2500V/mm breakdown voltage and over 5000 dielectric constant, can be obtained. |
