| 摘要 |
<p>PURPOSE:To facilitate the separation of semiconductor chips without causing damage in the vicinity of the semiconductor chips, or the semiconductor chips themselves, by forming V-shaped trenches in the areas to be scribed on a semiconductor substrate on which a number of semiconductor chips are formed by means of selective etching, and separating the semiconductor chips by scribing the inside of the trenches. CONSTITUTION:A resist pattern 7 is formed for protecting the surfaces of chips 2 on a substrate 1 while areas 3 to be scribed of the resist pattern are partially opened. V-shaped trenches 4 are formed by subjecting the substrate 1 having resist openings 8 to wet etching in which etching is obliquely carried out. The substrate on which the etched trenches 4 are made is thinned layer by polishing the rear surface thereof, whereby the chips are finished. Scribing areas are formed by scribing the bottoms of the etching trenches 4 in the areas 3 to be scribed, and thereafter the chips are separated. Thereby, the separation of the chips can be assured without causing damage in the vicinity of the chips, or the chips themselves.</p> |
