| 摘要 |
PURPOSE:To provide a highly reliable semiconductor device which sufficiently responds to fine pitching in wirings of semiconductor device, high packing density and reduction of thickness of device and moreover is superior to close contactness between insulating resin to be used for sealing of semiconductor element and film carrier. CONSTITUTION:A conductive circuit 5 is buried so that it is not exposed toward both surfaces 6a, 6b of an insulating material layer 5 and continuity paths 7, 8 are formed in pair deviated toward the surface direction the conductive circuit 5 from both surfaces 5a, 5b of the conductive circuit 5. The continuity paths 7, 8 are respectively connected to bumps 9, 10 the conductive circuit 5 and bumps 9, 10 are in a continuity through the continuity paths 7, 8 bump 9 formed at the one end part of the one continuity path 7 of the film carrier 2 is in contact with an electrode 12 of a semiconductor device 3 and is electrically connected thereto and the film carrier 2 mounts a semiconductor element 3. An insulating resin layer 4 is formed in contact with the single surface 6a of the insulating baterial layer 6, covering this semiconductor element 3. |
