| 摘要 |
<p>PURPOSE:To provide a construction of an electrostatic chuck capable of improving the film forming speed distribution during the formation of an insulation film on wafer by reducing the influence of temperature rise at electrode due to an RF current as an electrostatic chuck to which an RF voltage is applied at its internal electrode. CONSTITUTION:An RF current per feeder point is reduced by reducing the influence of electrode temperature by locating an RF voltage feeder point on electrode outside the contact surface of an object to be absorbed or by providing a plurality of feeder points (two or more). In order to easily realize these, an electrode is made of a two-layer construction for RF introduction 1-2 and absorption 1-1. Both of them are connected together with a conductor and the conductor is positioned at the RF voltage feeder point for absorbing electrode.</p> |
