| 摘要 |
<p>PURPOSE:To obtain a unit type semiconductor laser device excellent in heat dissipation performance and mechanical strength. CONSTITUTION:The semiconductor laser device is constituted of a first lead 1 having a recess 6 at the front end and a terminal part 4 at the rear end thereof, a light receiving element 9 mounted on the bottom face of the recess 6 in the first lead 1, a semiconductor laser element 14 mounted on the light receiving element 9 while having the light emitting face on the front side, second and third leads 7, 8 arranged in parallel with the terminal part of the first lead while being spaced apart therefrom, and an insulating frame 50 formed to hold the leads 1, 7, 8 while exposing the light emitting face of the semiconductor laser element 14 and the lower face of the recess 6.</p> |
