| 摘要 |
<p>PURPOSE:To achieve that a plurality of kinds of semiconductor devices whose junction area is different are manufactured simply by the small number of photomasks by a method wherein a plurality of openings formed respectively so as to correspond to a plurality of regions, in which junctions are to be formed, on a semiconductor substrate are constituted in such a way that their size is different from each other. CONSTITUTION:An SiO2 film 2 is formed on a GaAs chip 9, and openings 2b to 2e are formed in the SiO2 film 2 by a photolithographic method using a first photomask 11 in which a prescribed mask pattern 11a has been formed. Then, a metal film used to form a bonding pad and a Schottky electrode is formed on the whole surface of the GaAs chip 9, and the metal film is patterned by a photolithographic method using a second photomask in which a prescribed mask pattern 12a has been formed. Thereby, a bonding pad 10 and a Schottky electrode part 10a which is integrated with it are formed. The title manufacture can be completed by two photomasks instead of eight photomasks which are required in ordinary cases.</p> |
