| 摘要 |
<p>PURPOSE:To prevent that a glass substrate is warped and to enhance the yield of the title transistor by a method wherein a transparent substance whose thermal conductivity is specific is formed as a film on the glass substrate. CONSTITUTION:A diamond thin film 2 as a transparent substance is formed, in a thickness of 1mum, on the surface of a glass substrate 1 by a plasma CVD method using, e.g. methane gas as a raw-material gas. A diamond is used as the transparent substrate in order to utilize its properties that it has a thermal conduction of 10W/mK or higher, that its thermal conductivityis good and that is transparent. Then, a gate electrode 3 by an Mo-Ta alloy film is formed on the diamond thin film 2. Then, by a thermal process at 300 deg.C or higher, a silicon oxide film 4 is formed on the whole surface of the diamond thin film 2 including the gate electrode 3 so as to cover the gate electrode 3. Even in the thermal process at 300 deg.C or higher, the distribution of the temperature on both faces of the glass substrate is uniform, and it is possible to prevent that the glass substrate is warped.</p> |
