| 摘要 |
PURPOSE:To provide the optical semiconductor device which has novel constitution using the multiple quantum well structure. CONSTITUTION:This optical semiconductor device has the multiple quantum well structure MQW alternately laminated with semiconductor barrier layers B having a relatively wide band gap and having high resistivity and semiconductor well layers W having a relative narrow band gap and having high resistivity, a first low-resistivity region of a first conduction type and second low-resistivity region of a second conduction type disposed to face each other on a plane holding the first high resistivity region delineated in the film thickness direction within the multiple quantum well structure MQW and a means capable of applying a reverse bias voltage between the first and second low-resistivity regions. |
