SEMICONDUCTOR SWITCH AND TEMPERATURE SENSING CIRCUIT

摘要

PURPOSE: To realize easy manufacturing by forming a thermal response semiconductor device of a number of device cells in a power semiconductor device having a temperature sensor which switches off a power semiconductor device when a power semiconductor device has specified temperature conditions. CONSTITUTION: A power semiconductor device is formed of a semiconductor body 10 with a first region 13 of one conductivity type adjacent to a main surface 10a and a plurality of device cells 11 forming an insulation gate electrolytic effect device. Each cell 11 is provided with a second region 32 of an opposite conductivity type provided inside the first region 13 and an insulation gate 34 which is provided on a conductive channel region of a third region 33 and the second region 32 of one conductivity type provided inside the second region 32 and provides a gatable conductive path between both regions 32, 33. A temperature sensor has a temperature sensitive semiconductor device with a number of device cells 11' of the same constitution as the device 11 and has a parasitic bipolar transistor formed by connecting the insulation gate 34 of the cell 11' to the third region 33.