发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To provide a wiring of the structure with which the thermal diffusion of gold into a diffusion layer in a wiring, which s mainly composed of gold and having a barrier layer on the bottom face and the structure with which the adhesiveness between a wiring and the insulating film surrounding it is not impaired by the thermal diffusion into the gold of the metal constituting a barrier layer. CONSTITUTION:A first layer of wiring is composed of the main material of golds 4a and 7a, titanium/tungsten 5a which directly brought into contact with an inorganic insulating film 3a containing a contact hole 2, platium 6a with which the above-mentioned titanium/tungsten 5a is covered, and titanium/ tungsten 5b which directly comes in contact with the gold 7a.
申请公布号 JPH0677222(A) 申请公布日期 1994.03.18
申请号 JP19920134555 申请日期 1992.05.27
申请人 NEC CORP 发明人 ODA NORIAKI
分类号 H01L21/28;H01L21/3205;H01L21/768;H01L23/52;H01L23/522;H01L23/532;(IPC1-7):H01L21/320;H01L21/90 主分类号 H01L21/28
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