| 摘要 |
PURPOSE:To realize a quantum wire type field effect transistor capable of remarkably reducing the source resistance at the time of high frequency operation, by forming a barrier layer between a gate electrode and an ohmic electrode which layer wraps a wire type active layer, and a metal layer electrically connected with the ohmic layer on the barrier layer. CONSTITUTION:A quantum wire active layer 2 turning to a wire type channel is formed on a semiinsulative semiconductor substrate 1. In order to supply a current to the layer 2, a source electrode 3 and a drain electrode 4 are formed on both sides. A gate electrode 5 is formed so as to wrap each thin wire at the central part of the substrate 1, and insulating films 6 are formed on both sides of the electrode 5. Metal films 7 formed on the films 6 are connected with the source electrode 3 and the drain electrode 4. Hence the metal films 7 constitute capacitors together with the quantum thin wire active layer 2, via the insulating film 6. At the time of high frequency operation, the metal films 7 and the quantum wire active layer are shorted and the distance between ohmic electrodes is effectively reduced, so that the source resistance component can be remarkably reduced. |
