| 摘要 |
PURPOSE:To reduce the area of an element region by forming a guard ring at the outside of the element region. CONSTITUTION:A silicon oxide film 5 which is buried and installed partly at the inner side from the surface of an N-type epitaxial layer 3 its formed, and two element regions are formed. One is a region to be used as a cathode for a Schottky barrier diode, and the other is a region to be used as an anode. A P-type diffused layer 9 (a guard ring) is formed under the silicon oxide film 5. An opening part is formed in one part of the guard ring layer 8 and in the N-type epitaxial layer 3 surrounded by the guard ring layer 8, and a platinum silicide 9 is formed to form a Schottky barrier connection. When the alignment accuracy of an aligner is at 0.4mum and the width of the guard ring is set at 1.0mum for safety's sake, an element region of (1+1.5+1)X(1+20+1)mum is required when the Schottky barrier diode of an area of 1.5X20mum is required. However, the element region is sufficient at 1.5X20mum and can be reduced by about. |
