| 摘要 |
PURPOSE:To improve the forward characteristic and the reverse characteristic of the title semiconductor device by a method wherein the width on the main surface of a second Schottky metal layer, having a small barrier height, which is sandwiched by a first Schottky metal layer having a large barrier height is set at a specific value or lower. CONSTITUTION:Then, regarding a first Schottky metal layer 7 and a second Schottky metal layer 8 whose barrier height is different from each other, Al is selected for the layer 7 and Ti is selected for the layer R, the barrier height of the first Schottky metal layer 7 becomes larger than that of the second Schottky metal layer 8. A metal barrier layer 9 is formed of TEN or the like. The width W on the main surface of a single-crystal substrate 2 of the second Schottky metal layer 8, having a small barrier height, which is sandwiched by the first Schottky metal layer 7 having a large barrier height is set at 1mum. Thereby, a Schottky barrier semiconductor device whose forward loss and reverse loss are extremely small and whose loss is low can be constituted with high integration density. |
