| 摘要 |
<p>PURPOSE:To lower the drain leak current value by protecting a transparent electrode and passivating only a thin-film transistor necessitating hydrogen- passivation treatment with hydrogen. CONSTITUTION:An insulating substrate 5, a picture element part 1 including a polycrystal silicon thin-film transistor for switching a formed on the substrate 5, a driving circuit part 2 for driving the picture element part 1 formed adjacent to the picture element part 1 and including the transistor and a thin-film transistor array substrate having the protective layer consisting of silicon nitride film 3 or the plasma silicon oxide film 3 formed on the surface of the picture element part 1 and driving circuit part 2 are provided in the liq. crystal display device. At least a part of the thin-film transistor part for switching of the picture element 1 is opened, and the hydrogen concn. of the polycrystal silicon active layer at the open part 4 is higher than that of the polycrystal silicon active layer at the closed part.</p> |
