| 发明名称 |
MICROSCOPIC STRUCTURE FORMING METHOD FOR COMPOUND SEMICONDUCTOR |
| 摘要 |
PURPOSE:To provide a method for formation of an AlxGa1-xAs/GaAs series microscopic structure having excellent controllability, uniformity, a small damage sustaining property and workability. CONSTITUTION:A GaAs spacer layer 16 and a GaxIn1-xP (0<=x<1) mask layer 17 are continuously crystal-grown. An etching mask is formed using a hydrochloric acid etched. An AlxGa1-xAs 15/GaAs14 quantum well structure is etchant using a sulfuric acid etchant, and a compound semiconductor of microscopic structure is formed.
|
| 申请公布号 |
JPH0677205(A) |
申请公布日期 |
1994.03.18 |
| 申请号 |
JP19920226876 |
申请日期 |
1992.08.26 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
WAKABAYASHI SHINICHI;TOGO HITOMARO;TOYODA YUKIO |
| 分类号 |
H01L21/306;H01L21/308;H01L21/335;H01S5/00;(IPC1-7):H01L21/306;H01S3/18 |
主分类号 |
H01L21/306 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
