| 摘要 |
<p>A magnetoresistor (MR) and a non-magnetoresistor (NMR) are formed of indium antimonide or other magnetoresistive material in thermal proximity to each other on an integrated circuit substrate. Hall effect shorting strips (104) are formed on the magnetoresistor (MR) to make it much more magnetoresistive than the non-magnetoresistor (NMR). A current mirror (80) causes equal constant currents which do not vary with temperature to flow through the magnetoresistor (MR) and non-magnetoresistor (NMR), such that magnetoresistor and non-magnetoresistor voltages are developed thereacross respectively. The magnetoresistor and non-magnetoresistor voltages vary equally in accordance with temperature. The magnetoresistor voltage also varies in accordance with applied magnetic flux. A comparator (66) substracts the non-magnetoresistor voltage from the magnetoresistor voltage to produce an output signal (Vout) with the temperature variation cancelled, and which thereby varies only in accordance with magnetic flux. The current mirror (80) has an essentially infinite equivalent load impedance, such that the magnetoresistor voltage varies to a maximum possible extent with variation of the resistance of the magnetoresistor (MR) and the sensor (70) has a maximum possible output voltage swing.</p> |
