METHOD OF DETECTING END POINT OF ETCHING

摘要

A detection method which can determine highly accurately the end point of etching of a multilayer film such as of thin films or thick films by a simple device. In a process of etching thin films formed on a substrate (10a), a laser beam (m) is applied to an ITO (10c) to be etched. After etching this film, the laser beam (m) is applied to SiOn (10b) formed under the etched film, P light (s) is emitted from the SiOn film, and the end point of etching is determined by detecting this light emission.