Reaction chamber for chemical vapour deposition - comprises wafer heating appts., gas supply head, reaction chamber element, waste gas outlet

摘要

Reaction chamber for CVD comprises (a) a wafer heating appts. (28) to hold a wafer (14) and heat the wafer (14), in which the appts. (28) rotates around the middle of the appts. (28); (b) a gas supply head (37) provided in a low position lying opposite the appts. (28) and forming an area of constant distance (53) to introduce reaction gas onto the appts. (28); (c) a reaction chamber element (54) surrounding the distance region (53) between the wafer heating appts. (28) and the gas supply head (37) to form a reaction chamber with closed space; and (d) a waste gas outlet (33) formed in the chamber element (54) and along the total periphery of the appts. (23) to remove the gas. USE/ADVANTAGE - For chemical gas phase deposition. A wafer can be efficiently processed.