| 摘要 |
Process for growing a plurality of highly pure single crystals from a replenished melt, by maintaining the purity of the molten starting material in the melt, which is situated in a crucible which in turn is situated in a furnace of the type as is used for growing highly pure single crystals. The process is composed of several steps: growing at least one crystal from the starting material in the melting crucible, pulling out a portion of the melt remaining in the crucible, adding highly pure starting material to the melt and growing at least one additional single crystal. The device employed in this process for pulling out the silicon consists of an insulated container with a feed pipe for introducing the molten starting material into the container. A vacuum source connected to the container is used to draw the starting material into the container. … <IMAGE> … |
