| 摘要 |
PURPOSE:To make it possible to reduce the base resistances and base-collector capacities of transistors by a method wherein external base layers are formed by diffusing an impurity through Si films, the Si films are used as base electrode lead-out layers and also, active base layers and collector-base insulating films are formed in a self-matching manner conforming to the patterns of the Si films. CONSTITUTION:In case an N-P-N transistor and a P-N-P transistor are provided in the same semiconductor substrate 1, external base layers 7a, 7a', 7b and 7b' of the transistors are formed using Si films 603a and 602b as impurity diffusion sources and the Si films 603a and 602b are used as base electrode lead-out layers. Moreover, active base layers 8a and 8b and thick oxide films 106a and 106b between collector electrode lead-out layers 6a and 6b and the external base layers 7a' and 7b' are formed in a self-matching manner conforming to the patterns of the Si films 603a and 602b. Thereby, the interval between emitter layers and the external base layers is lessened and the base resistances of the transistors are reduced, and at the same time, the base areas are reduced and the base-collector capacitors can be lessened. |
