发明名称 Semiconductor memory device and method for controlling an output buffer utilizing an address transition detector
摘要 When data read out from a memory cell array is output to an external device through an output buffer, a first and a second address transition detector generate a first read control pulse signal and a second read control pulse signal in response to a change in an address signal. An operation for reading out data is controlled using the first and second read control pulse signals, such that when noise generated by a change in power source potential, due to a change in output, causes a possible detected change in the address signal, the first and second address transition detectors control the output buffer so erroneous operation is prevented.
申请公布号 US5295117(A) 申请公布日期 1994.03.15
申请号 US19920884276 申请日期 1992.05.13
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 OKADA, YOSHIO
分类号 G11C11/41;G11C7/22;G11C8/18;G11C11/413;(IPC1-7):G11C7/02;G11C11/34 主分类号 G11C11/41
代理机构 代理人
主权项
地址