Semiconductor integrated circuit capable of correcting wiring skew

摘要

A plurality of standard cells are placed on a semiconductor substrate. A first aluminum wiring layer is connected to those standard cells. Below the first aluminum wiring layer, a second wiring layer is formed which is not connected to the standard cells and which, together with the first wiring layer, forms a capacitor. Between the first and second aluminum wiring layers, an insulating layer is formed. Wiring skew is adjusted by making through-holes in the insulating layer, and connecting the first and second aluminum wiring layers to each other via as many through-holes as required to vary the capacitance between them.