Semiconductor memory device with redundant circuit for rescuing from rejection due to large current consumption

摘要

A semiconductor memory device has regular memory cells arranged in rows and columns, and at least one of the rows is replaced with redundant memory cells when one of the regular memory cells in the row is defective, wherein a fuse element is broken for isolating a power supply line associated with the row from a main power supply line so that a defective memory cell does not consume any current, thereby improving the power consumption of the semiconductor memory device.