| 摘要 |
This invention provides a semiconductor memory device comprising a plurality of memory cells having a common source diffused region extending in a specified direction, a word line that extends in parallel with the common source diffused region and is connected to each gate of the plurality of memory cells, a first source interconnection composed of a first metal interconnection layer electrically connected to the common source diffused region, and a second source interconnection that extends in parallel with the word line and is composed of a second metal interconnection layer electrically connected to the first source interconnection.
|
