Polycide local interconnect method and structure

摘要

A local interconnect comprises a doped, silicided amorphous or polysilicon layer 28. One interconnect 34, 35 extends between an isolated gate contact 60 and a source and drain 61 of an NMOS transistor 42. Another local interconnect 34,37 extends between a source and a drain 62, 63 of CMOS transistors.