| 摘要 |
A plasma ashing method to prevent a generation of a resist-residue buildup is disclosed that includes a step for installation of a substrate on which a photoresist material is formed in a chamber, a step for drawing a vacuum in the chamber and keeping the chamber at a predetermined pressure, a step for filling oxygen gas in the camber and keeping the chamber at approximately 1 Torr, and a step for applying a high-frequency electric power of 0.10 (W/cm2) or less to the oxygen gas. A more effective range of the high-frequency electric power per area of the internal wall of the chamber is from 0.008 to 0.10 (W/cm2). The most effective value of the high-frequency electric power is 0.055 (W/cm2).
|
