| 摘要 |
PURPOSE:To obtain a gallium nitride-based compound semiconductor light- emitting element wherein pure blue light constituting three primary colors for light is emitted by a method wherein an I layer is formed as a two-layer structure by a first Zn-doped I layer and by a second Mg-doped I layer. CONSTITUTION:An AlN buffer layer 2 is formed on a sapphire substrate 1, and a high-carrier-concentration N<+> layer 3 composed of GaN, a low-carrier- concentration N layer 4 composed of GaN, a first I layer 5 at a Zn concentration of 1X10<20>/cm<3> and a second I layer 6 at an Mg concentration of 1X10<20>/cm<3> are formed sequentially on it. Then, an electrode 7 connected to the second I layer 6 and formed of aluminum and an electrode 8 connected to the high- carrier-concentration N<+> layer 3 and formed of aluminum are formed. Consequently, when the luminous intensity of a light-emitting diode 10 is measured, it is at 10mcd, its luminous wavelength is at 460 to 470nm and it is possible to obtain nearly pure blue emitted light which can constitute three primary colors for light. |
