| 摘要 |
PURPOSE:To improve the yield and reliability of semiconductor devices having capacitive elements by resolving the problem of a capacitor dielectric film tending to fail in proximity to the boundary among the lower electrode, capacitor dielectric film and base insulating layer of a capacitive element. CONSTITUTION:A silicon nitride film 7 is used for the surface film of the insulating layer 10 under the lower electrode 3 of a capacitive element. This reduces the unevenness in the thickness of the silicon nitride film 4 in a capacitor dielectric film grown on the lower electrode 3 and insulating layer 10. It also prevents defects from occurring in the capacitor dielectric film in proximity to the boundary among the lower electrode, capacitor dielectric film and base insulating layer. |
