发明名称 METHOD AND DEVICE FOR SEMICONDUCTOR ELEMENT SIMULATION
摘要 <p>PURPOSE:To perform one-dimensional simulation in a shirt time with a high precision. CONSTITUTION:This device consists of an initial value input part 1 which inputs an initial physical quantity at the time of estimating the influence upon a one- dimensional simulation area of the multidimensional effect obtained from a two-dimensional area, a two-dimensional effect estimating part 2 which uses the inputted initial physical quantity to estimate the influence, a one-dimensional simulation executing part 3 which determines the variation of a simulation parameter in the one-dimensional simulation area based on the estimated influence and physical relations between the two-dimensional area and the one- dimensional simulation area and executes one-dimensional simulation, and a physical quantity determining part 4 which determines the physical quantity on the one-dimensional simulation area in accordance with the one-dimensional simulation result. Thus, the design efficiency of a semiconductor element is improved.</p>
申请公布号 JPH0668064(A) 申请公布日期 1994.03.11
申请号 JP19920221578 申请日期 1992.08.20
申请人 TOSHIBA CORP 发明人 AOKI NOBUTOSHI;KANEMURA TAKANAGA;AMAKAWA HIROTAKA
分类号 H01L29/00;G06F17/00;G06F17/50;G06F19/00;H01L21/336;H01L29/78;(IPC1-7):G06F15/20;G06F15/60 主分类号 H01L29/00
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