发明名称 SEMICONDUCTOR DEVICE FOR HIGH-FREQUENCY POWER AMPLIFICATION
摘要 <p>PURPOSE:To facilitate circuit pattern design on a circuit board by disposing at multidirectional positions lead terminals which have been drawn in one direction. CONSTITUTION:A circuit board 3 is mounted on a beat dissipation plate 4 4. Mounted on the circuit board 3 are the inner portions of lead terminals 2, a semiconductor chip 5 for amplification, a circuit element 6, connecting tabs 7 and the like, which are electrically connected to the circuit board 3. The circuit board 3 is sealed by the board 4 and a sealing cap 9. In addition, the semiconductor chip 5 is electrically connected to the connecting tabs 7 through bonding wires 8. Furthermore, lead terminals 2 of different functions are disposed at multidirectional portions. Since this construction can facilitate the design of a circuit pattern 10 of a semiconductor device for high-frequency power amplification 1 and obviate cross wirings such as bias lines, the circuit pattern 10 can be simplified.</p>
申请公布号 JPH0669408(A) 申请公布日期 1994.03.11
申请号 JP19920221251 申请日期 1992.08.20
申请人 HITACHI LTD 发明人 KAMISHIRO IWAMICHI;NUMANAMI MASAHITO
分类号 H01L23/04;H01L23/02;H01L23/50;H03F3/60;H05K1/02;(IPC1-7):H01L23/50 主分类号 H01L23/04
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