| 摘要 |
PURPOSE:To reduce the size of a memory cell by a method wherein a P-type channel transistor is replaced by a thin film transistor which is composed of polycrystalline silicon films and functions equivalently to the P-type channel transistor. CONSTITUTION:An N-type channel transistor is composed of an N<->-type diffused layer 31 which is a source connected to a (-) power supply Vss, an N<+>-type diffused layer 32 which is a drain and a polycrystalline silicon layer 20 which is a gate. On the other hand, a P-type channel transistor is composed of a source 55 connected to a (+) power supply VDD, a channel 54 and a drain 56 which are made from a polycrystalline silicon layer 22 and a gate made from the polycrystalline silicon layer 20. The respective drains 32 and 56 are connected to each other through a diode. With this constitution, the P-type channel transistor and the N-type channel transistor are so provided as to form layers and the size of a memory cell can be reduced. |
