| 摘要 |
<p>PURPOSE:To prevent a cross-talk defect occurring due to a leakage current in a detecting transistor in a line defect detection circuit on an active matrix substrate. CONSTITUTION:In the line defect detection circuit on the active matrix substrate incorporating a horizontal scanning driver circuit, the detecting transistor 32 is made to be an LDD (Lightly Doped Drain) structure or an off-set structure. An off current in the transistor is reduced by these structures, and the cross-talk defect between source lines 34 is prevented. In the section of the transistor, a structure where no impurity atom exists in the thin film silicon of the bottom part of a gate electrode 4 and no impurity atom exists between AB as well is the off-set structure, and the structure where the impurity with lower density than a source drain part 2 exists between AB is the LCD structure.</p> |
