| 摘要 |
PURPOSE:To get a fluoric resin film as the insulating film for the wiring layer of a semiconductor element or a multichip module by exposing the photosensitive film on a substrate and developing it, and then, exposing it in fluoric gas atmosphere. CONSTITUTION:Photosensitive resist OMR 2 is applied on a substrate 1, and is prebaked. Next, OMR2 is exposed to fluoric gas atmosphere so as to form a first insulating film 3. Next, Al is stacked by sputtering, and patterning is performed to form a first Al wiring 4. Next, photosensitive resist OMR 5 is applied and baked, and OMR 5 is exposed and developed using a mask pattern. Next, it is exposed to fluoric gas atmosphere again to get a second insulating film 7. Hereby, an insulating film excellent in induction property and heat resistance can be formed.
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