FORMATION OF FINE RESIST PATTERN

摘要

PURPOSE:To form a fine resist pattern with high accuracy. CONSTITUTION:A substrate is coated with a positive photoresist 1 containing naphthoquinone diazide and novolac resin. An upper anti-reflection film 9, conditioned to be alkaline, is applied thereon. The positive photoresist 1 applied with the anti-reflection film 9 is then irradiated selectively with light and subsequently developed.