发明名称 BLOCH LINE MEMORY ELEMENT AND MEMORY DEVICE USING THIS ELEMENT
摘要 PURPOSE:To shorten access time by forming a magneto-optical film on a ferromagnetic material thin film having an information input/output function part for making cross-exchange of a Bloch line pair and bubble magnetic domains and executing writing/reading out by using a laser beam. CONSTITUTION:The surface of the ferromagnetic material thin film 15 of the Bloch line element is provided with the magnetooptical film 13 consisting of a TbFeCo alloy film or multilayered CoPt films, etc. The writing of the information is executed by previously impressing bias magnetic fields to the element, irradiating the film 13 with the laser 23 to write the magnetic domains 18 in correspondence to the upper part within the film 13, then writing the Bloch line pairs within the striped magnetic domains 1 by a magnetostatic effect. The reading out of the information is executed by lowering the coercive force of the film 13 by irradiation of the film with the laser, thereby converting the magnetic domain arrays in the magnetic domains 1 to the magnetic domain array in the film 13, then detecting the light as reflected light. Then, the Bloch line memory is constituted without using fine zigzag conductor patterns and the access time is shortened.
申请公布号 JPH0668665(A) 申请公布日期 1994.03.11
申请号 JP19920220185 申请日期 1992.08.19
申请人 HITACHI LTD 发明人 FUJIMOTO KAZUHISA;MARUYAMA YOJI
分类号 G11C11/14;G11C13/06;(IPC1-7):G11C11/14 主分类号 G11C11/14
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