| 摘要 |
PURPOSE:To obtain a method for forming a resist pattern suited for formation of a fine pattern. CONSTITUTION:By applying ultraviolet rays with a specific wavelength to a resist for irradiation with electron rays without using the dissolution operation due to a solvent, the resist elimination speed ratio at an electron ray irradiated part and an electron ray non-irradiated part is increased and patterning of the resist is performed, thus completely eliminating the trouble due to the use of solvent and at the same time executing patterning of resist by a facility without any safety measures with the solvent and also forming a fine pattern. |
