| 摘要 |
PURPOSE: To form capacitors in the enlarged surface region of a carrier by a method wherein the carrier is made of single crystal silicon and the surface of the carrier is partially enlarged by electrochemical etching in fluoride compound containing acidic electrolyte in which the carrier is inserted as an anode. CONSTITUTION: A carrier 21 made of single crystal silicon has a region 22 in its surface which is enlarged by electrochemical etching in fluoride compound containing acidic electrolyte in which the carrier is inserted as an anode. Capacitors 23 are formed in the region 22. The sizes of the capacitors 23 are restricted by the geometrical shapes of conductive layers of which the capacitors are composed. Integrated circuits 24 are formed on the carrier 21 outside the region 22. Metallized parts 25 are arranged on the surfaces of the capacitors 23 and extended onto the surface of the carrier 21. With this construction, the metallized parts 25 are used as the parts connected to the conductive layers of the capacitors 23 as well and the capacitors 23 can be connected to the integrated circuits 24.
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