REFLECTED ELECTRON DETECTOR IN SCANNING ELECTRON MICROSCOPE OR THE LIKE

摘要

PURPOSE:To provide a favorable detection sensitivity to a reflected electron and a sufficient detection current quantity. CONSTITUTION:A light receiving surface facing a sample 3 in a semiconductor detector 9 is formed of an N-type semiconductor (N<+>) layer 12, and the other surface is formed of a P-type semiconductor (P<+>) layer 10. This means that, paying attention to an electric field E by a space charge formed between PIN layers of silicon (Si) semiconductor, the light receiving surface of reflected electrons is set to be the N<+> layer so that the electric field E acts in the normal direction to motion of the electrons and holes.