| 摘要 |
PURPOSE:To form an insulating film of silicon nitride wherein the deterioration of its film quality is small and its leak characteristic is excellent. CONSTITUTION:A polysilicone film is formed on a silicon oxide film 2 on a silicon substrate 1, it is doped with phosphorus, a prescribed part in the polysilicone film is then patterned, and a lower-layer polysilicone layer 3 is formed. Then, a silicon nitride film 4 is formed on the polysilicone layer 3. A polysilicone film is formed on the whole surface of the silicon nitride film 4, it is doped with phosphorus, a prescribed part in the polysilicone film is then patterned, and an upper-layer polysilicone layer 5 is formed. After a silicon oxide film 6 has been applied to the whole surface, a heat treatment is executed at 1000 deg.C in an N2 atmosphere in order to make the silicon oxide film 6 dense. After that, a heat treatment is executed at 900 deg.C for 30 minutes in a hydrogen atmosphere. |
