发明名称 MEMORY DEVICE
摘要 <p>PURPOSE:To stably read out data even if writing and deletion are repeated by compensating an inputted value to a sense amplifier from a memory transistor for Reference in accordance with ascending of threshold value voltage of a regular transistor memory. CONSTITUTION:When data is read out from a memory, voltage of a bit line Bt of a regular memory transistor(Tr) 1 is compared with voltage of a bit line Br of a memory transistor for Reference Tr3. When threshold value voltage of a blank state of the memory Tr ascends due to writing and deletion of a memory, voltage of the bit line Bt of the Tr1 ascends, and it cause voltage difference between voltage of the bit line Br of the Tr3 and voltage mentioned above. A compensating section 9 compensates voltage of the bit line Br in accordance with the difference. Thereby, data can be stably read out from the memory even if threshold value voltage of the blank state of the memory Tr is varied.</p>
申请公布号 JPH0668682(A) 申请公布日期 1994.03.11
申请号 JP19920244323 申请日期 1992.08.20
申请人 MITSUBISHI ELECTRIC CORP 发明人 INOUE HIROHIKO
分类号 G11C17/00;G11C16/06;(IPC1-7):G11C16/06 主分类号 G11C17/00
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