| 摘要 |
PURPOSE:To improve close contact strength of a lead with a wire in the case of wire bonding by using an ultrasonic wave and thermal energy by varying a vibrating direction of the wave according to a position of the lead. CONSTITUTION:A wire bonding method using both an ultrasonic wave and thermal energy varies a vibrating direction of the wave according to a position of a lead. Two bonding stages for wiring a semiconductor device to leads are provided. Oscillating directions of the waves are varied by 20-29 degrees on bonding stages 12, 13, and one semi-product is wire bonded twice on the stages 12, 13. In this case, two bonding heads 5, 5' are, for example, provided, and vibrators 3, 3' to be placed on the heads 5, 5' to oscillate the ultrasonic waves are so mounted that an angle alpha of the oscillating directions 2 of the waves is 20-90 degrees. |
