| 摘要 |
<p>PURPOSE:To provide a semiconductor device with a small dielectric loss caused by a resin sealing package, by using a resin sealing package made of a sealing resin base material mixed with a resin having a lower permittivity than the resin base material. CONSTITUTION:A resin 60 for forming a resin sealing package 5 is made up of an epoxy resin 60a mixed with a given amount of PTFE resin 6 having a permittivity lower than that of the epoxy resin 60a. Then, the resin sealing package 5 has a lower permittivity than that of one made up of only the epoxy resin 60a. Then, a dielectric loss between the resin sealing package 5 and a wire-bonding wire 4, inner leads 43, 44, and 45 is reduced. Consequently, the noise figure (NF) and the power gain (Ga) in high-frequency characteristics are improved in GaAs FET.</p> |
